EDS2014

Technical information

If you are making an invited talk: Invited talks are scheduled for 50min. Please plan your talk for 40min presentation + 10min discussion. 

 

If you are making an oral presentation: Contributed talks are scheduled for 25min. Please plan your talk for 20min presentation + 5min discussion.


The lecture hall is equipped with computer, projector, screen, blackboard, laser pointer and microphones. Presentations should be in Microsoft PowerPoint, version 2010 (.ppt or .pptx) or Adobe Acrobat Reader 9.x (.pdf). Any animation or video files must be compatible with Windows 7 and Windows Media Player.

Speakers are kindly asked to submit their presentation at least half a day in advance their scheduled presentation time, i.e. in the morning for afternoon sessions and in the previous evening for morning sessions in order to ensure smoothly running sessions. Any special requirements concerning visual aids should be addressed to the local organizers at the very latest on the day before their scheduled presentation time.


If you are making a poster presentation:

Boards will be available along with the necessary mounting pins. The poster size should be planned for DIN A0 (841mm width by 1189mm height) in portrait orientation. Please, be sure that your poster is easily readable from the distance of 100 cm. A sign listing the paper number will aid each presenter in locating the correct board where their poster is to be displayed. Participants are kindly asked to mount their poster at the beginning of the conference. Posters will be displayed throughout the meeting.


Important: Please note that each poster session will begin with a 2-3 minutes oral presentation in the conference lecture hall, summarizing the key aspects of each contribution in order to distribute vital information among all participants. A PowerPoint presentation with maximum of three slides should be uploaded to the conference PC during the lunch break of the relevant day. Authors need to be present at their posters for discussion with participants during the poster sessions.


Download pdf-Version here: Scientific Program (Version 2014-08-21)

Sunday 14th September

15:00

Registration

 

 

 

 

17:30

Opening

 

 

17:50

Armin Feist, Reiner Bormann, Jakob Schauss, Jan-Gregor Gatzmann, Nara Rubiano da Silva, Stefanie Strauch, Sascha Schäfer, Claus Ropers (I01)

 

Ultrafast transmission electron microscopy with nanoscopic electron sources

 

 

18:30

Welcome Reception

 

 

Monday 15th September

 

 

Session 1: Energy conversion and storage

 

 

Chairperson:

 

 

 

08:30

Hannu Laine, Ville Vähänissi, Jasmin Hofstetter, Ashley E. Morishige, Antti Haarahiltunen, David P. Fenning and Hele Savin (I02)

 

The size distribution of iron precipitates in phosphorous-implanted emitters

 

 

09:20

C.A. Volkert, T. Wuttke, B. Roos, C. Nowak, and V. Roddatis (O01)

 

In-Situ TEM Observation of Planar Defects Prior to Amorphisation of Si by Electrochemical Lithiation

09:45

Volker Naumann, Dominik Lausch, Angelika Hähnel, Otwin Breitenstein and Christian Hagendorf (O02)

 

2D-Extended Defects in Silicon cause shunting of Si-Solar Cells

 

 

10:10

 

Coffee Break

Session 2: Strain and Strain Relaxation

Chairperson:

 

 

 

10:40

Thomas Kehagias (I03)

 

Resolving Structure and Strain Issues in Simple and Complex III-Nitride Nanowires

 

 

11:30

R. Hull, Dustin Andersen and Hamed Parvaneh (O03)

 

Inverse Simulation of Misfit Dislocation Network Formation

 

 

11:55

P. Pirouz, A. Sehirlioglu (O04)

 

Surface Cracking as a Relaxation Mode in Strained Heteroepitaxial Films

 

 

12:20

M. Reiche, M. Kittler, E. Pippel, W. Erfurth, A. Haehnel, and H. Uebensee (O05)

 

Strain and Carrier Transport along Dislocations

 

 

 

 

12:50

 

Lunch

 

 

Session 3: Atomic Structure of extended defects

Chairperson:

 

 

 

14:30

Talid Sinno (I04)

 

Inherent landscape analysis of defect microstructure in crystalline materials

 

 

15:20

H. Yang, Juan G Lozano, Timothy J Pennycook, Peter B Hirsch and Peter D Nellist (O06)

 

STEM Optical Sectioning for Imaging Screw Displacements in Dislocation Core Structures

 

 

15:45

C.D. Latham, P. J. L. Young, T. P. Trevetha, M. I. Heggi, M. J. Rayso, P. R. Briddon (O07)

 

An ab initio Investigation into Dislocation Structures in Graphite

 

 

16:10

J. Vanhellemont, S. Anada, T. Nagase, H. Yasuda, A. Schulze, H. Bender, R. Rooyackers and A. Vandooren (O08)

 

On the Impact of Dopants and Si Structure Dimensions on {113}-defect Formation during In-situ 2 MeV Electron-irradiation in an UHVEM

 

 

16:35

Break

 

 

17:00

Poster session I

 

 

Chairperson:

 

Tuesday 16th September

 

 

Session 4: Doping, Implantation, Irradiation

Chairperson:

 

 

 

08:30

Esidor Ntsoenzok, Carole Braley, Sylvia Pokam, Frédéric Mazen (I05)

 

10-100?m ultra-thin substrates produced by MeV hydrogen implantation in Si: fundamentals and applications

 

 

09:20

Jean-Francois Barbot, M. Vallet, E. Oliviero and M.F. Beaufort (O09)

 

In situ evolution of helium bubbles in 4H-SiC under irradiation

 

 

09:45

A. B Smirnov, V.P. Kladko, A.A. Korchovyi, R.K. Savkina, F.F. Sizov, R.S. Udovitska (O10)

 

Nanoscale Pattern Formation On The Surface Of HgCdTe Produced By Ion Bombardment

 

 

10:10

 

Coffee Break

Session 5: Dislocations I

Chairperson:

 

 

 

10:40

Maxim Trushin, O. Vyvenko (I06)

 

Enhancement of the Carrier Thermoemission From the Electronic States at Dislocation Core Due to Attractive Deformation Potential

 

 

11:30

O.V. Feklisova, V.I. Orlov and E.B. Yakimov (O11)

 

EBIC and LBIC investigations of dislocation trails in Si

 

 

11:55

Vitaly Kveder, Maria Khorosheva and Michael Seibt (O12)

 

On the Nature of Point Defects Generated by Motion of Dislocations in Si

 

 

12:20

D. Jameel, J. F. Felix, M. Aziz, N. Al Saqri, D Taylor, and M. Henini (O13)

 

Investigation of Defects in Polyaniline (PANI) Grown on High Index GaAs Planes Using Current-Voltage, Conductance and Deep Level Transient Spectroscopy (DLTS)

 

 

12:50

 

Lunch

 

 

Session 6: Mechanical  

Chairperson:

 

 

 

14:30

Julien Godet, Firas Abed El Nabi, J. Guénolé, Sandrine Brochard, and L. Pizzagalli (I07)

 

Atomistic approach of the brittle ductile transition in silicon at low dimensions through the understanding of dislocation and crack nucleation mechanism

 

 

15:20

I. Yonenaga, Y. Imoto, , Y. Ohno, K. Kutsukake and M. Deura (O14)

 

Dislocation Mobilities in Ductile to Brittle Temperature Region in Si

 

 

15:45

S. Würzner, Rajko Buchwald, Hans Joachim Möller (O15)

 

Surface damage and mechanical stability of silicon wafers

 

 

 

16:10

J. Rabier, F. Pailloux and L. Pizzagalli  (O16)

 

On the Dislocation Core Structures Associated to Point Defect Clusters and Micro Crack Formation in Diamond and Silicon

 

 

16:35

 

Break

 

 

17:00

      

Poster session II

Chairperson:

 

 

 

Wednesday 17th September

 

 

Session 7: Advanced Characterization

 

 

08:30

C. Trager-Cowan, G. Naresh-Kumar, N. Allehiani, S. Kraeusel, B. Hourahine, S. Vespucci, D. Thomson, J. Bruckbauer, G. Kusch, P. R. Edwards, R. W. Martin, A. P. Day, A. Winkelmann, A.Vilalta-Clemente, A. J. Wilkinson (I08)

 

Electron Channelling Contrast Imaging of Extended Defects in III-Nitride Semiconductors

 

 

09:20

Amina Tandjaoui, Th?cle Ribéri-Béridot, Nathalie Mangelinck-No?l, Guillaume Reinhart, Gabrielle Regula, Tamzin Lafford, José Baruchel  (O17)

 

In Situ and Real-Time Combination of X-Ray Radiography and Topography Towards Mastering of Si Growth

 

 

09:45

Alexander Senichev, Vadim Talalaev, Igor V. Shtrom, Horst Blumtritt, George Cirlin, Christoph Lienau, Peter Werner (O18)

 

Correlated Nanospectroscopic Imaging and Structural Analysis of Individual Beryllium-doped GaAs/AlGaAs Core-Shell Nanowires

 

 

10:10

 

Coffee Break

Session 8: Grain boundaries and interfaces

Chairperson:

 

 

 

10:40

Takashi Sekiguchi, Karolin Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada and Koichi Kakimoto (I09)

 

Control of extended defects in cast and seed cast Si ingots for photovoltaic application

 

 

11:30

E. Hieckmann, M. Nacke, M. Allardt, Y. Bodrov, P. Chekhonin and J. Weber (O19)

 

Optical Behaviour, Electrical Activity and Residual Strains of Grain Boundaries in Silicon

 

 

11:55

Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama (O20)

 

Interactions of impurity atoms with ?3{111} and ?9{114} grain boundaries in silicon

 

 

Lunch

 

 

Afternoon: Excursion

 

 

Thursday 18th September

 

 

Session 9: Dislocations II

Chairperson:

 

 

 

 

 

08:30

Benjamin  Butz, Christian Dolle, Florian Niekiel, Konstantin Weber, Daniel Waldmann, Bernd Meyer, Heiko B. Weber and Erdmann Spiecker (I10)

 

Dislocations in Bilayer Graphene - Materials Science meets Physics

 

 

09:20

Daniel Oriwol, Hartmut S. Leipner, Andreas N. Danilewsky, Lamine Sylla, Winfried Seifert, Martin Kittler, Jan Bauer (O25)

 

Dislocation Cluster Formation in Multicrystalline Silicon

 

 

09:45

A. Loshachenko, O. Vyvenko, N. Vysotskii and O. Kononchuk (O22)

 

Low Temperature Kinetics of Hydrogen Interaction with Dislocations in Silicon

 

 

10:10

 

Coffee Break

Session 10: Defect Dynamics

Chairperson:

 

 

 

10:40

A.I. Kirkland, J Warner, A Robertson and C Allen (I11)

 

Structural Studies of Defects and Defect Dynamics in Graphene

 

 

11:30

I. Yonenaga  (O23)

 

Twin Formation during Czochralski-growth of Si and SiGe

 

 

11:55

I. Ratschinski, H. S. Leipner, N. Wüst, G. Leibiger and F. Habel (O24)

 

Motion of dislocations in freestanding (0001) GaN single crystals

 

 

12:20

Moumita Ghosh, G Mohan Rao and Michael Seibt (O25)

 

Can undoped ZnO nanorod be ultrahigh-piezoelectric?

 

 

12:50

 

Lunch

 

 

Session 11: Nanostructures

Chairperson:

 

 

 

14:30

F. Panciera, Y.-C. Chou, M. C. Reuter, K. Hoummada, D. Zakharov, E. A. Stach, D. Mangelinck, S. Hofmann and F. M. Ross (I12)

 

Nanoscale investigation of metal-semiconductor thin films and nano-structures

 

 

 

 

15:20

Stefania Carapezzi, Alessia Irrera, Vladimir Sivakov and Anna Cavallini (O26)

 

Impact of Processing Conditions on the Level Scheme of Silicon Nanowires Synthesized by Top-Down Techniques

 

 

15:45

A. Lotsari, G.P. Dimitrakopulos, Th. Kehagias, A. Adikimenakis, Ph. Komninou and A. Georgakilas (O27)

 

Structural Analysis of Inclined GaN Nanowires by TEM Techniques

 

 

16:10

Miao Yang, Nicolas A. Mayer and Horst P. Strunk (O28)

 

Resonant excitation of Tm luminescence via quantum dots formed by spinodal decomposition in AlxIn1-xN layers

 

 

Conference Dinner

 

 

Friday 19th September

 

 

Session 12: Group III nitrides

Chairperson:

 

 

 

08:30

Daniel Alquier, S. Kone, M. Portail, G. Gomme, M. Lamhamdi, W. Khalfaoui, G. Gautier, G. El Zammar, T. Oheix, A. Yvon, J. Ladroue, E. Collard, Y. Cordier and F. Cayrel (I13)

 

Growth and process induced defects in GaN : effects on power devices

 

 

09:20

J. Kioseoglou, T. Pavloudis, G. P. Dimitrakopulos, Th. Karakostas (O29)

 

Structural Reconstructions of InxGa1-xN Alloys

 

 

09:45

Imad Belabbas, Jun Chen and Gérard Nouet (O30)

 

Electronic structure of threading dislocations in wurtzite GaN

 

 

10:10

 

 

 

Coffee Break

Session 13: Opto-electronic properties

Chairperson:

 

 

 

10:40

John Moseley, Stuart Farrell, Harvey L. Guthrey, Wyatt K. Metzger, Richard K. Ahrenkiel, Mowafak M. Al-Jassim (O31)

 

Investigation of Structural Defect Related Luminescence in CdTe with Low- Temperature Cathodoluminescene Spectrum Imaging

 

 

11:05

M.K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D. Baranovskii, and M. Koch (O32)

 

Two-energy-scale model for the description of the thermal quenching of the photoluminescence in disordered GaAsBi

 

 

11:30

Daniela Cavalcoli, B.Fraboni, G. Impellizzeri, L. Romano, E.Scavetta , M. G. Grimaldi (O33)

 

Quantum confinement and light trapping effects in nanoporous Ge

 

 

11:55

Martin Kittler, T. Arguirov, M. Reiche, C. Krause and D. Mankovics (O34)

 

About dislocation and oxygen related luminescence of silicon around 0.8 eV

 

 

12:20

 

Closing remarks and farewell lunch