AG Hofsäss - II- Institute of Physics

Ultra-low energy ion implantation of graphene and 2D materials

We use ultra-low energy ion implantation to dope graphene films and related 2D materials such as MoS₂
Samples are implanted in Ultra-High vacuum with an implanted area of about 1 cm² (@10eV) and 2.5 cm² @25 eV.
We can also implant 2D films on TEM grids.
Up to now implanted species: B,N,C,Ne,P,Mn,Se,Au
Samples can be characterized with Auger electron spectroscopy and RBS. Both have sufficient sensitivity to detect dopant areal concentrations of about 10¹⁴/cm²

Graphene
MoS₂