Program
- Richard Warburton (Uni Basel)
"A quantum dot in an open microcavity as a fast and bright source of coherent single photons"
- Debdeep Jena (Cornell University)
"Ultra-high temperature epitaxy of 2D Boron Nitride and Graphene"
- Amilcar Bedoya-Pinto (Max-Planck Institute of Microstructure Physics)
"Topological semimetals and two-dimensional magnets grown by MBE: Crafting exotic physics into functional heterostructures"
- Anna Fontcuberta i Morral (École Polytechnique Fédérale de Lausanne)
"Selective area epitaxy of nanowires and networks: common mechanisms and differences between GaAs, Zn3P2 and Ge"
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| Thursday 14.10.2021 | ||
|---|---|---|
| 08:50 - 09:00 | Opening - Welcome | |
| Session 1: Single Photon sources and QDs | ||
| 09:00 - 09:45 invited |
Richard Warburton Univ. Basel |
A quantum dot in an open microcavity as a fast and bright source of coherent single photons |
| 09:45 - 10:00 | Piotr A. Wronski Univ. Würzburg |
Metamorphic buffer layer based single-photon sources for application in quantum telecommunications |
| 10:00 - 10:15 | Christian Heyn Univ. Hamburg |
Local droplet etching for self-assembled quantum structures: influence of the process parameters |
| 10:15 - 10:45 | Coffee break and meet in breakout rooms | |
| Session 2: Heterostructures for optical devices | ||
| 10:45 - 11:00 | Andreas Bader Univ. Würzburg |
Growth of Interband Cascade Detectors for Light Detection in the Mid Infrared Spectral Band |
| 11:00 - 11:15 | Alexander Dohms Frauenhofer HHI |
MBE-grown InP-based strain-free Semiconductor Saturable Absorber Mirror (SESAM) for ultrashort laser pulse generation at 1.56 μm |
| 11:15 - 11:30 | Maximilian Beiser TU Wien |
A novel method for strain balancing InAs based ICL growth |
| 11:30 - 12:30 | Lunch break | |
| 12:30 - 14:30 | Poster Session and Company Exhibition | |
| Session 3: 2D Materials and Oxides | ||
| 14:30 - 15:15 invited |
Debdeep Jena Cornell University |
Ultra-high temperature epitaxy of 2D Boron Nitride and Graphene |
| 15:15 - 15:30 | Eugenio Zallo WSI, TU München |
Large-area van der Waals Epitaxy of Monochalcogenide Based Materials |
| 15:30 - 15:45 | Hannah Genath Univ. Hannover |
Epitaxy of Gd2O3 layers on virtual SiGe substrates on Si(111) |
| 15:45 - 16:00 | Alex Karg Univ. Bremen |
Tin-catalyzed molecular beam epitaxy of Ga2O3 |
| 16:00 - 16:15 | Wolfgang Braun MPI Stuttgart |
Thermal Laser Epitaxy of Metals and Oxides |
| 16:15 - 16:45 | Coffee break and meet in breakout rooms | |
| Session 4: Topological Materials | ||
| 16:30 - 17:15 invited |
Amilcar Bedoya-Pinto MPI Halle |
(canceled) Topological semimetals and two-dimensional magnets grown by MBE: Crafting exotic physics into functional heterostructures |
| 16:30 - 16:45 | Rebecca Pons MPI Stuttgart |
Growth of Rare-Earth Nickelates by Oxide MBE |
| Friday 15.10.2021 | ||
| Session 5: In-plane nanowires and networks | ||
| 09:00 - 09:45 invited |
Anna Fontcuberta i Morral EPFL, Lausanne |
Selective area epitaxy of nanowires and networks: common mechanisms and differences between GaAs, Zn3P2 and Ge |
| 09:45 - 10:00 | Daria V. Beznasyuk Univ. Copenhagen |
Twofold electron mobility enhancement via growth optimization of InAs selective area grown nanowires |
| 10:00 - 10:15 | Didem Dede EPFL, Lausanne |
Horizontal InAs Nanowire Growth on Templates |
| 10:15 - 10:30 | Gunjan P. Nagda Univ. Copenhagen |
Selective Area Growth of III-V Nanowires on High-Index GaAs Substrates |
| 10:30 - 11:00 | Coffee break and meet in breakout rooms | |
| Session 6: Nanowires | ||
| 11:00 - 11:15 | Akhil Ajay WSI, TU München |
Highly uniform selective area epitaxy of non-VLS GaAsSb:Si nanowires |
| 11:15 - 11:30 | Gregor Koblmüller WSI, TU München |
Epitaxial type-I and type-II InAs-AlAsSb core-shell nanowires for on-chip mid-infrared emitters |
| Session 7: III-N Heterostructures | ||
| 11:30 - 11:45 | Jagadish Mahato TU Braunschweig |
Optical and structural properties of GaN/AlGaN Multi-Quantum Wells using Plasma Assisted MBE |
| 11:45 - 12:00 | S. Schmult TU Dresden |
Suppression of parasitic Conductivity in ultra-pure GaN/AlGaN Heterostructures by Carbon delta-Doping |
| 12:00 - 12:10 | Announcement - Closing | |
| Poster Session | ||
| P01 | Ahmed Alshaikh Univ. Hamburg |
Masked droplet etching for site-controlled quantum structures: concepts and simulations |
| P02 | Miriam Giparakis TU Wien |
Growth, Design, and Characterisation of an InAs/AlAsSb-based QCD at 2.7 µm |
| P03 | Ahsan Hayat BTU Cottbus-Senftenberg |
Ge-capped and uncapped Ge(1-y)Sn(y)/Si (001) quantum dots grown by Molecular Beam Epitaxy (MBE) |
| P04 | Constantin Hilbrunner Univ. Göttingen |
Nucleation of hBN on HOPG in conventional MBE |
| P05 | Shyjumon Ibrahimkutty Rigaku Europe SE |
Compound Semiconductor Material Evaluation by High Resolution X-ray Diffraction |
| P06 | Stefania Isceri TU Wien |
Epitaxy of YbRh2Si2 on Ge(001) |
| P07 | Marvin Jansen FZ Jülich |
Investigation and Characterization of ZnSe/ZnMgSe Multi-Shell Growth on Phase-Pure GaAs Nanowires |
| P08 | Vinayakrishna Joshi Univ. Kassel |
Epitaxial growth of InP-based 1.3 µm quantum dots |
| P09 | Anagha Kamath HU Berlin |
Catalyst free selective area growth of InP nanowires on Si nanotips |
| P10 | Ranbir Kaur Univ. Kassel |
Telecom wavelength InP-based quantum dots: Growth and characterization |
| P11 | Falco Meier Univ. Paderborn |
Selective area growth of cubic gallium nitride on 3C-silicon carbide (001) |
| P12 | Kevin Meyer TU Clausthal |
Growth of GaN films for different UV photodetector concepts by MBE |
| P13 | Jenny Norberg Univ. Hannover |
Investigation of the temperature stability of germanium-rich SiGe layers on Si(111) substrates |
| P14 | Christoph Ringkamp FZ Jülich |
Selective Area Epitaxy of Bi-based 3D Topological Insulators on Sapphire |
| P15 | Begüm Yavas Aydin Univ. Würzburg |
InGaAs Based Resonant Tunnelling Diodes Barrier and Spacer Layer Structure by Grown Gas Sources Molecular Beam Epitaxy |
| P16 | Eugenio Zallo WSI, TU München |
Epitaxial growth capabilities for 2D layered materials and their heterostructures |